Segregation-induced Ge precipitation in Ge2Sb2Te5 and N-doped Ge2Sb2Te5 line cells

نویسندگان

چکیده

Electromigration in Ge2Sb2Te5 and N-doped line cell structures has been studied by mapping out electric field/current-induced composition changes using x-ray energy dispersive spectroscopy. Both materials exhibit pronounced segregation a molten state, with Te moving toward the anode Ge Sb cathode. The width of transition region from over 90% to Ge–Sb was 500 nm for an field 1.1 × 107 V/m. In Ge–Sb-rich end cell, precipitates melt, forming almost pure inclusions size up 100 nm. Ge–Sb–Te precipitation do not appear be affected doping nitrogen.

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ژورنال

عنوان ژورنال: AIP Advances

سال: 2022

ISSN: ['2158-3226']

DOI: https://doi.org/10.1063/5.0087570